Samulak A, Fischer G, Weigel R (2010)
Publication Type: Conference contribution
Publication year: 2010
Publisher: IEEE
Conference Proceedings Title: 18th International Conference on Microwave Radar and Wireless Communications (MIKON)
Event location: Vilnius, Lithuania
ISBN: 978-1-4244-5288-0
URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5540454
A Class-S Power Amplifier architecture seems to be an attractive alternative for classical PAs due to offered very high efficiency operation. Switching mode PA principle assumes combined operation based on digital, single - bit Delta-Sigma (ΔΣ) modulated signals and RF analog signals, what complicates design and analysis procedures. However the Class-S PA topology is known, there are not any universal design methods which can be unambiguous applied to considered architecture. Presented work defines and describes design method for Class-S PA based on GaN HEMT transistors. Moreover main simulation results for Class-S architecture based on Current Switching Class-D (CSCD) configuration at the carrier frequency of 900 MHz have been performed.
APA:
Samulak, A., Fischer, G., & Weigel, R. (2010). Design and Simulation GaN based Class-S PA at 900MHz. In 18th International Conference on Microwave Radar and Wireless Communications (MIKON). Vilnius, Lithuania: IEEE.
MLA:
Samulak, Andrzej, Georg Fischer, and Robert Weigel. "Design and Simulation GaN based Class-S PA at 900MHz." Proceedings of the 18th International Conference on Microwave Radar and Wireless Communications (MIKON), Vilnius, Lithuania IEEE, 2010.
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