Observation of atomic ordering of triple-period-A and -B type in GaAsBi

Wu M, Luna E, Puustinen J, Guina M, Trampert A (2014)


Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Publisher: AMER INST PHYSICS

Book Volume: 105

Pages Range: 041602

Journal Issue: 4

DOI: 10.1063/1.4891854

Abstract

We report the observation of atomic ordering of triple-period (TP)-A and -B type in low temperature (LT) grown GaAsBi alloy using transmission electron microscopy (TEM). In addition to previous reports, where only TP-A ordering was identified in III-V alloys, here, we confirm by electron diffraction, high-resolution (HR) TEM, and HR Z-contrast scanning TEM that two ordering variants coexists for LT-GaAsBi. We find that the TP-A ordering variant dominates over the TP-B variant. TP-A domains extend over 50-100 nm (projected lateral width) and are of higher perfection compared to TP-B domains. HR Z-contrast scanning TEM on different domains reveals a variation in the Bi occupancy in the {111} planes with triple period sequence. Since the formation of ordered phases has been directly linked to the occurrence of specific surface reconstructions, our results suggest a correlation between the TP-A and B type domains and the multiple stability of n x 3 and 3 x n reconstructions on the (001) surface of GaAsBi under low temperature growth. (C) 2014 AIP Publishing LLC.

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APA:

Wu, M., Luna, E., Puustinen, J., Guina, M., & Trampert, A. (2014). Observation of atomic ordering of triple-period-A and -B type in GaAsBi. Applied Physics Letters, 105(4), 041602. https://doi.org/10.1063/1.4891854

MLA:

Wu, Mingjian, et al. "Observation of atomic ordering of triple-period-A and -B type in GaAsBi." Applied Physics Letters 105.4 (2014): 041602.

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