Low-Voltage p- and n-Type Organic Self-Assembled Monolayer Field Effect Transistors

Beitrag in einer Fachzeitschrift
(Report)


Details zur Publikation

Autorinnen und Autoren: Novak M, Ebel A, Meyer-Friedrichsen T, Jedaa A, Vieweg B, Yang G, Voitchovsky K, Stellacci F, Spiecker E, Hirsch A, Halik M
Zeitschrift: Nano Letters
Verlag: American Chemical Society
Jahr der Veröffentlichung: 2011
Band: 11
Heftnummer: 1
Seitenbereich: 156-159
ISSN: 1530-6984
Sprache: Englisch


Abstract


We report on p- and n-type organic self-assembled monolayer field effect transistors. On the base of quaterthiophene and fullerene units, multifunctional molecules were synthesized, which have the ability to self-assemble and provide multifunctional monolayers. The self-assembly approach, based on phosphonic acids, is very robust and allows the fabrication of functional devices even on larger areas. The p- and n-type transistor devices with only one molecular active layer were demonstrated for transistor channel lengths up to 10 μm. The monolayer composition is proven by electrical experiments and by high-resolution transmission electron microscopy, electron energy loss spectroscopy, XPS, and AFM experiments. Because of the molecular design and the contribution of isolating alkyl chains to the hybrid dielectric, our devices operate at low supply voltages (-4 V to +4 V), which is a key requirement for practical use and simplifies the integration in standard applications. The monolayer devices operate in ambient air and show hole and electron mobilities of 10 cm/(V s) and 10 cm/(V s) respectively. In particular the n-type operation of self- assembled monolayer transistors has not been reported before. Hereby, structure-property relations of the SAMs have been studied. Furthermore an approach to protect the sensitive C from immediate degradation within the molecular design is provided. © 2011 American Chemical Society.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Halik, Marcus Prof. Dr.
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Hirsch, Andreas Prof. Dr.
Lehrstuhl für Organische Chemie II
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Spiecker, Erdmann Prof. Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Vieweg, Benito Dr.-Ing.
Professur für Werkstoffwissenschaften (Elektronenmikroskopie)


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

H.C. Starck GmbH
Massachusetts Institute of Technology (MIT)


Forschungsbereiche

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials
A2 Nanoanalysis and Microscopy
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Novak, M., Ebel, A., Meyer-Friedrichsen, T., Jedaa, A., Vieweg, B., Yang, G.,... Halik, M. (2011). Low-Voltage p- and n-Type Organic Self-Assembled Monolayer Field Effect Transistors. Nano Letters, 11(1), 156-159. https://dx.doi.org/10.1021/nl103200r

MLA:
Novak, Michael, et al. "Low-Voltage p- and n-Type Organic Self-Assembled Monolayer Field Effect Transistors." Nano Letters 11.1 (2011): 156-159.

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Zuletzt aktualisiert 2019-29-05 um 08:46