Concept of a Molecular Charge Storage Dielectric Layer For Organic Thin-Film Memory Transistors
Burkhardt M, Jedaa A, Novak M, Ebel A, Voitchovsky K, Stellacci F, Hirsch A, Halik M (2010)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2010
Journal
Original Authors: Burkhardt M., Jedaa A., Novak M., Ebel A., Voitchovsky K., Stellacci F., Hirsch A., Halik M.
Publisher: Wiley-VCH Verlag
Book Volume: 22
Pages Range: 2525-2528
Journal Issue: 23
URI: http://onlinelibrary.wiley.com/doi/10.1002/adma.201000030/abstract
Abstract
(Figure Presented) A mixed self-assembled monolayer containing aliphatic and electron-accepting (C ) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of the monolayer components, the transistor and memory characteristics can be tuned. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Authors with CRIS profile
Andreas Hirsch
Lehrstuhl für Organische Chemie II
Marcus Halik
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Additional Organisation(s)
Involved external institutions
United States (USA) (US)How to cite
APA:
Burkhardt, M., Jedaa, A., Novak, M., Ebel, A., Voitchovsky, K., Stellacci, F.,... Halik, M. (2010). Concept of a Molecular Charge Storage Dielectric Layer For Organic Thin-Film Memory Transistors. Advanced Materials, 22(23), 2525-2528. https://dx.doi.org/10.1002/adma.201000030
MLA:
Burkhardt, Martin, et al. "Concept of a Molecular Charge Storage Dielectric Layer For Organic Thin-Film Memory Transistors." Advanced Materials 22.23 (2010): 2525-2528.
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