Trapping field assisted backscattering in strong-field photoemission from dielectric nanospheres

Seiffert L, Henning P, Rupp P, Zherebtsov S, Hommelhoff P, Kling MF, Fennel T (2017)


Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2017

Journal

Book Volume: 64

Pages Range: 1096-1103

Journal Issue: 10-11

URI: https://www.tandfonline.com/doi/full/10.1080/09500340.2017.1288838

DOI: 10.1080/09500340.2017.1288838

Abstract

We study strong-field ionization of dielectric nanospheres and focus on the enhancement of the cut-off energies for backscattering electrons resulting from charge interaction. Though recent studies clearly demonstrated the decisive impact of a surface trapping field on the electron backscattering process, a clear picture of the underlying mechanism is lacking. Here, we provide this picture and present a simple and transparent extension of the famous three-step model of strong-field science by adding a triangular surface trapping potential. We justify this model for the case of dielectric nanospheres based on high-level transport simulations. The analysis of the trapping field assisted backscattering provides a universal scaling of the maximal recollision and backscattering energies as 9 Up and 14.5 Up, respectively, where Up the local ponderomotive potential. The universal nature of the enhancement over the conventional three-step model is of particular interest for the generation of attosecond electron bunches via near-field induced photoemission and high harmonic generation at nanostructures.

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APA:

Seiffert, L., Henning, P., Rupp, P., Zherebtsov, S., Hommelhoff, P., Kling, M.F., & Fennel, T. (2017). Trapping field assisted backscattering in strong-field photoemission from dielectric nanospheres. Journal of Modern Optics, 64(10-11), 1096-1103. https://dx.doi.org/10.1080/09500340.2017.1288838

MLA:

Seiffert, Lennart, et al. "Trapping field assisted backscattering in strong-field photoemission from dielectric nanospheres." Journal of Modern Optics 64.10-11 (2017): 1096-1103.

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