The Role of Si during the Growth of GaN Micro- and Nanorods

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Tessarek C, Heilmann M, Butzen E, Haab A, Hardtdegen H, Dieker C, Spiecker E, Christiansen S
Zeitschrift: Crystal Growth & Design
Verlag: American Chemical Society
Jahr der Veröffentlichung: 2014
Band: 14
Heftnummer: 3
Seitenbereich: 1486-1492
ISSN: 1528-7483


Abstract


The role of Si during the metal-organic vapor phase epitaxy of GaN rods is investigated. Already a small amount of Si strongly enhances the vertical growth of GaN. Reactive ion etching experiments show that the inner volume of the rod is much more strongly etched than the m-plane surface layer. Transmission electron microscopy and energy dispersive X-ray spectroscopy measurements reveal that Si is predominiantly incorporated in the surface layer of the m-plane sidewall facets of the rods. The formation of a SiN layer prevents growth on and etching of the m-planes and enhances the mobility of atoms promoting vertical growth. Annealing experiments demonstrate the extraordinary thermal resistivity in comparison to undoped GaN rod structures and GaN layers. The subsequent InGaN quantum well growth on the GaN rods reveals the antisurfactant effect of the SiN layer. A model based on the vapor-liquid-solid growth mode is proposed. The results help to understand the role of Si during growth of GaN rod structures to improve the performance of rod based light emitting and electronic devices.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Dieker, Christel
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Spiecker, Erdmann Prof. Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


Zusätzliche Organisationseinheit(en)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)
Exzellenz-Cluster Engineering of Advanced Materials


Einrichtungen weiterer Autorinnen und Autoren

Forschungszentrum Jülich / Research Centre Jülich (FZJ)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Forschungsbereiche

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials
A2 Nanoanalysis and Microscopy
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Tessarek, C., Heilmann, M., Butzen, E., Haab, A., Hardtdegen, H., Dieker, C.,... Christiansen, S. (2014). The Role of Si during the Growth of GaN Micro- and Nanorods. Crystal Growth & Design, 14(3), 1486-1492. https://dx.doi.org/10.1021/cg500054w

MLA:
Tessarek, C., et al. "The Role of Si during the Growth of GaN Micro- and Nanorods." Crystal Growth & Design 14.3 (2014): 1486-1492.

BibTeX: 

Zuletzt aktualisiert 2018-01-09 um 07:09