Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

Lemberger M, Paskaleva A, Zürcher S, Bauer A, Frey L, Ryssel H (2005)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2005

Journal

Microelectronics Reliability Elsevier

Book Volume: 45

Pages Range: 819-822

DOI: 10.1016/j.microrel.2004.11.040

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A., Frey, L., & Ryssel, H. (2005). Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. Microelectronics Reliability, 45, 819-822. https://dx.doi.org/10.1016/j.microrel.2004.11.040

MLA:

Lemberger, Martin, et al. "Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor." Microelectronics Reliability 45 (2005): 819-822.

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