Growth of GaN Nanorods and Wires and Spectral Tuning of Whispering Gallery Modes in Tapered GaN Wires

Tessarek C, Dieker C, Spiecker E, Christiansen S (2013)


Publication Status: Published

Publication Type: Journal article

Publication year: 2013

Journal

Publisher: Japan Society of Applied Physics

Book Volume: 52

Journal Issue: 8

DOI: 10.7567/JJAP.52.08JE09

Abstract

This paper reports on the growth of GaN nanorods and wires by metal-organic vapor phase epitaxy. Density, height and diameter are strongly influenced by the growth time. A deposition time of a few minutes leads to the formation of GaN nanorods. Increasing the deposition time up to 1 h yields wires with heights exceeding 47 mu m. Transmission electron microscopy and convergent beam electron diffraction measurements are showing the presence of N- and Ga-polar GaN in a single nanorod. Cathodoluminescence measurements are performed showing the appearance of whispering gallery modes. Due to slight tapering of the wires the whispering gallery modes can be spectrally tuned by changing the position of the exposing electron beam at the sidewall facet of the rod. (C) 2013 The Japan Society of Applied Physics

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How to cite

APA:

Tessarek, C., Dieker, C., Spiecker, E., & Christiansen, S. (2013). Growth of GaN Nanorods and Wires and Spectral Tuning of Whispering Gallery Modes in Tapered GaN Wires. Japanese Journal of Applied Physics, 52(8). https://dx.doi.org/10.7567/JJAP.52.08JE09

MLA:

Tessarek, Christian, et al. "Growth of GaN Nanorods and Wires and Spectral Tuning of Whispering Gallery Modes in Tapered GaN Wires." Japanese Journal of Applied Physics 52.8 (2013).

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