Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals

Will J, Gröschel A, Weißer M, Magerl A (2011)

Publication Status: Published

Publication Type: Journal article

Publication year: 2011

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: AMER INST PHYSICS

Book Volume: 98

Journal Issue: 4

DOI: 10.1063/1.3531761

Abstract

The thickness dependence of the integrated Bragg intensities for Czochralski-grown silicon was measured with the characteristic tungsten K(alpha 1)-line at 59.3 keV. In contrast to previous experiments the sample is wedge shaped, which allows to take data over a wide range of Pendellosung fringes in one exposure only and without any mechanical movement of the sample. The period length, the oscillation amplitude, and the mean value of the Bragg intensity can be explored to identify the presence of point defects, and the temperature dependence of the period length allows to quantify the thermal Debye-coefficient with high precision. (c) 2011 American Institute of Physics. [doi:10.1063/1.3531761]

Authors with CRIS profile

Johannes Will Lehrstuhl für Kristallographie und Strukturphysik (ICSP) Alexander Gröschel Lehrstuhl für Kristallographie und Strukturphysik (ICSP) Matthias Weißer Lehrstuhl für Kristallographie und Strukturphysik (ICSP) Andreas Magerl Lehrstuhl für Kristallographie und Strukturphysik (ICSP)

How to cite

APA:

Will, J., Gröschel, A., Weißer, M., & Magerl, A. (2011). Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals. Applied Physics Letters, 98(4). https://doi.org/10.1063/1.3531761

MLA:

Will, Johannes, et al. "Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals." Applied Physics Letters 98.4 (2011).

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