In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C

Will J, Gröschel A, Bergmann C, Magerl A (2012)


Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2012

Journal

Book Volume: 9

Pages Range: 1920-1923

Journal Issue: 10-11

DOI: 10.1002/pssc.201200064

Abstract

The time dependent agglomeration of oxygen in silicon at an annealing temperature of 650 degrees C is followed in-situ via the variation of the thickness-dependent Pendellosung fringes. The measurement of the 400-reflection of a wedge shaped sample with the characteristic tungsten K-alpha 1-line at 59.31 keV allows to observe changes of the static Debye-Waller factor of about 0.001%. Within the model of spherical precipitates and the classical theory of diffusion-driven precipitation we determine from this a diffusion constant 4.7x10(-15) cm(2)/s for oxygen in silicon at 650 degrees C which appears enhanced by a factor of 2.4 as compared to normal oxygen diffusion. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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How to cite

APA:

Will, J., Gröschel, A., Bergmann, C., & Magerl, A. (2012). In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C. (pp. 1920-1923).

MLA:

Will, Johannes, et al. "In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C." 2012. 1920-1923.

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