Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
Yanev V, Erlbacher T, Rommel M, Bauer AJ, Frey L (2009)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2009
Journal
Book Volume: 86
Pages Range: 1911-1914
DOI: 10.1016/j.mee.2009.03.094
Abstract
High-k dielectrics exhibit strong variations in their electrical characteristics on the nanometer scale due to morphology alteration. Therefore, electrical measurement techniques with nanometer resolution based on atomic force microscopy (AFM) like conductive AFM (cAFM) and tunneling AFM (TUNA) are essentially very well applicable to complement conventional macroscopic current--voltage (IV) techniques. Comparative experiments between conventional IV, cAFM and TUNA measurements on SiO2 films and on high-k/SiO2 stacks prove the capability and the accuracy of cAFM/TUNA as advanced methods for electrical characterization of thin dielectric films. Especially TUNA provides the spatial resolution and the current sensitivity required for the characterization of local electrical properties at the nanoscale allowing for the characterization of dielectric layers at high current densities.
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Germany (DE)How to cite
APA:
Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., & Frey, L. (2009). Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale. Microelectronic Engineering, 86, 1911-1914. https://dx.doi.org/10.1016/j.mee.2009.03.094
MLA:
Yanev, V., et al. "Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale." Microelectronic Engineering 86 (2009): 1911-1914.
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