Leakage current and defect characterization of p+n-source/drain diodes

Roll G, Goldbach M, Frey L (2011)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2011

Journal

Microelectronics Reliability Elsevier

Book Volume: 51

Pages Range: 2081-2085

Journal Issue: 12

DOI: 10.1016/j.microrel.2011.05.015

Abstract

A good control of the transient enhanced dopant diffusion is needed for MOSFET scaling down to the sub 50~nm regime. Carbon ion implant is known to significantly suppress the transient enhanced boron diffusion. However, carbon implantation is also reported to increase diode leakage current. This paper investigates the impact of ion implantation and annealing conditions during source/drain extension formation on leakage current behavior of boron/phosphorous diodes of PFET transistors. Analyzing the leakage current it is difficult to distinguish between the influence of the increased electric field due to the reduced diffusion and possible additional trap centers in the space charge region. This distinction can be made by electrical characterization, as shown in this paper. The leakage current mechanism is found to be trap assisted tunneling with phonon interaction. The corresponding trap energy within the band gap is 0.58~$±$~0.10~eV. The carbon concentration in the space charge region measured by SIMS is below the detection limit. Also in electrical measurements, which are more sensitive, no significant influence of carbon related traps is observed. The leakage current is increased by the application of a Flash Anneal additionally to a Rapid Thermal Anneal for recrystallization of the silicon substrate.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Qimonda AG DE Germany (DE)

How to cite

APA:

Roll, G., Goldbach, M., & Frey, L. (2011). Leakage current and defect characterization of p+n-source/drain diodes. Microelectronics Reliability, 51(12), 2081-2085. https://dx.doi.org/10.1016/j.microrel.2011.05.015

MLA:

Roll, Guntrade, Matthias Goldbach, and Lothar Frey. "Leakage current and defect characterization of p+n-source/drain diodes." Microelectronics Reliability 51.12 (2011): 2081-2085.

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