Tunable quantum interference in bilayer graphene in double-resonant Raman scattering

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Herziger F, Tyborski C, Ochedowski O, Schleberger M, Maultzsch J
Zeitschrift: Carbon
Jahr der Veröffentlichung: 2018
Band: 133
Seitenbereich: 254-259
ISSN: 0008-6223
Sprache: Englisch


Abstract


The line shape of the double-resonant 2D Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the double-resonant Raman scattering processes in bilayer graphene on the electronic broadening parameter g. We demonstrate that the ratio between symmetric and antisymmetric scattering processes sensitively depends on the lifetime of the electronic states, explaining the experimentally observed variation of the complex 2D-mode line shape.


FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Technische Universität Berlin
Universität Duisburg-Essen


Zitierweisen

APA:
Herziger, F., Tyborski, C., Ochedowski, O., Schleberger, M., & Maultzsch, J. (2018). Tunable quantum interference in bilayer graphene in double-resonant Raman scattering. Carbon, 133, 254-259. https://dx.doi.org/10.1016/j.carbon.2018.03.026

MLA:
Herziger, Felix, et al. "Tunable quantum interference in bilayer graphene in double-resonant Raman scattering." Carbon 133 (2018): 254-259.

BibTeX: 

Zuletzt aktualisiert 2019-01-01 um 21:10