Overcoming the Interface Losses in Planar Heterojunction Perovskite-Based Solar Cells

Hou Y, Chen W, Baran D, Stubhan T, Luechinger NA, Hartmeier B, Richter M, Min J, Chen S, Ramírez Quiroz CO, Li N, Zhang H, Heumüller T, Matt G, Osvet A, Forberich K, Zhang ZG, Li Y, Winter B, Schweizer P, Spiecker E, Brabec C (2016)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

Publisher: Wiley-VCH Verlag

Pages Range: 5112-5120

DOI: 10.1002/adma.201504168

Abstract

An experiment was conducted to demonstrate that low-temperature processed NiO-based nanocrystal ink (LT-NiO) has the potential to form an almost loss-free hole selective interface for flat heterojunction perovskite-based solar cells. First, The patterned ITO substrates were ultrasonic cleaned with acetone and isopropanol for 10 min each. On cleaned ITO substrate, a dense and smooth layer of LT-NiO was deposited by spin coating and followed by annealing at 70?230°C for 10 min in air to remove organic components. The as-prepared perovskite precursor solution was filtered using 0.45 μm PTFE syringe filter and coated onto the ITO/LT-NiO substrate at a speed of 4000 r.p.m. for 35 s. J-V characteristics of all the devices were measured using a source measurement unit from BoTest. FTPS:FTPS-EQE measurements were carried out using a Vertex 70 from Brucker optics, equipped with QTH lamp, quartz beam splitter and external detector option. A major improvement in open circuit voltage is found by replacing PEDOT:PSS with LT-NiO. A detailed analysis reveals that LT-NiO significantly reduces non-radiative recombination at the PEDOT:PSS/perovskite interface and further enhances the radiative LED efficiency towards unity which brings open circuit voltage closer to the radiative limit.

Authors with CRIS profile

Yi Hou Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Wei Chen Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Derya Baran Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Tobias Stubhan Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Moses Richter Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Jie Min Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Shi Chen Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) César Omar Ramírez Quiroz Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Ning Li Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Hong Zhang Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Thomas Heumüller Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Gebhard Matt Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Andres Osvet Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Karen Forberich Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Benjamin Apeleo Zubiri Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Peter Schweizer Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Erdmann Spiecker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Christoph Brabec Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)

Additional Organisation(s)

Involved external institutions

How to cite

APA:

Hou, Y., Chen, W., Baran, D., Stubhan, T., Luechinger, N.A., Hartmeier, B.,... Brabec, C. (2016). Overcoming the Interface Losses in Planar Heterojunction Perovskite-Based Solar Cells. Advanced Materials, 5112-5120. https://doi.org/10.1002/adma.201504168

MLA:

Hou, Yi, et al. "Overcoming the Interface Losses in Planar Heterojunction Perovskite-Based Solar Cells." Advanced Materials (2016): 5112-5120.

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