Paskova T, Becker L, Böttcher T, Hommel D, Paskov P, Monemar B (2007)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2007
Publisher: Wiley - V C H Verlag GmbbH & Co.
Pages Range: 2256– 2259
Journal Issue: 7
We have studied the effects of film and substrate thicknesses on the bending and strain of thick GaN films
grown by HVPE. Both experimental and simulation data, being in a very good agreement, show the highest
bending at a critical film thickness slightly smaller than the substrate thickness, while the strain remains
decreasing with only a small increase at much higher film thicknesses. Temperature dependent
measurements allows a separation of the thermally induced component and an extrapolation of the bending
to the growth temperature. The latter was found to be dependent on both the film and substrate
thickness and to have a strong effect on the remaining bending of freestanding films.
APA:
Paskova, T., Becker, L., Böttcher, T., Hommel, D., Paskov, P., & Monemar, B. (2007). Bending in HVPE grown GaN films: Origin and reduction possibilities. Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 2256– 2259. https://dx.doi.org/10.1002/pssc.200674819
MLA:
Paskova, Tania, et al. "Bending in HVPE grown GaN films: Origin and reduction possibilities." Physica Status Solidi (C) Current Topics in Solid State Physics 7 (2007): 2256– 2259.
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