Paskova T, Becker L, Böttcher T, Hommel D, Paskov P, Monemar B (2007)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2007
Publisher: American Institute of Physics (AIP)
Pages Range: 1-4
Article Number: 123507
Journal Issue: 102
DOI: 10.1063/1.2817955
The effect of sapphire-substrate thickness on the curvature and stress in thick hydride vapor phase
epitaxial GaN films was studied by high-resolution x-ray diffraction at variable temperatures. The
curvature was found to have the maximum value for comparable thicknesses of the film and the
substrate, while the stress at the film surface decreases with increasing film thickness and increases
with increasing substrate thickness, which is in very good agreement with the simulation results.
The curvature at the growth temperature was found to be strongly influenced by the value of the
intrinsic tensile strain, which is determined by the film/substrate thickness ratio.
APA:
Paskova, T., Becker, L., Böttcher, T., Hommel, D., Paskov, P., & Monemar, B. (2007). Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy. Journal of Applied Physics, 102, 1-4. https://dx.doi.org/10.1063/1.2817955
MLA:
Paskova, Tania, et al. "Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy." Journal of Applied Physics 102 (2007): 1-4.
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