Atom probe specimen preparation and 3D interfacial study of Ti-Al-N thin films
Rachbauer R, Massl S, Stergar E, Felfer P, Mayrhofer PH (2010)
Publication Status: Published
Publication Type: Journal article
Publication year: 2010
Journal
Publisher: Elsevier
Book Volume: 204
Pages Range: 1811-1816
Journal Issue: 11
DOI: 10.1016/j.surfcoat.2009.11.020
Abstract
3D-atom probe tomography is used to study the atomistic morphology of Ti-Al-N thin films in the as deposited and annealed states. We present results on modification of a focused ion beam based lift-out technique to meet the challenges for specimen preparation of substrate-free thin film material, which allows to avoid substrate interference during post-deposition annealing. We further emphasize the influence of doped silicon and low-carbon steel posts on the measurement performance during atom probe tomography of Ti(0.46)Al(0.54)N films. Pre-sharpened silicon posts ensure the preparation of equally shaped specimens, whereas steel posts reach a better mass resolution. Taking these results into account, we moreover examined the decomposition of Ti(0.46)Al(0.54)N towards TiN and AlN with respect to determination and distribution of oxygen impurities as a function of temperature. Thereby we observe an enrichment of these oxygen impurities in AIN with increasing annealing temperature to 1350 degrees C, from an originally random distribution in the as-deposited state. (C) 2009 Elsevier B.V. All rights reserved.
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APA:
Rachbauer, R., Massl, S., Stergar, E., Felfer, P., & Mayrhofer, P.H. (2010). Atom probe specimen preparation and 3D interfacial study of Ti-Al-N thin films. Surface & Coatings Technology, 204(11), 1811-1816. https://dx.doi.org/10.1016/j.surfcoat.2009.11.020
MLA:
Rachbauer, Richard, et al. "Atom probe specimen preparation and 3D interfacial study of Ti-Al-N thin films." Surface & Coatings Technology 204.11 (2010): 1811-1816.
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