Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)
Hürner A, Mitlehner H, Erlbacher T, Bauer A, Frey L (2016)
Publication Status: Published
Publication Type: Authored book, Volume of book series
Publication year: 2016
Publisher: Trans Tech Publications Ltd
Book Volume: 858
Pages Range: 917-920
ISBN: 9783035710427
DOI: 10.4028/www.scientific.net/MSF.858.917
Abstract
In this study, the potential of forward conduction loss reduction of Bipolar-Injection Field-Effect-Transistors (SiC-p-BIFET) with an intended blocking voltage of 10kV by adjusting the doping concentration in the channel-region is analyzed. For the optimization of the SiC-p-BIFET, numerical simulations were carried out. Regarding a desired turn-off voltage of approximately 25V, the optimum doping concentration in the channel-region was found to be 1.4×10cm. Based on these results, SiC-p-BIFETs were fabricated and electrically characterized in the temperature range from 25°C up to 175°C. In this study, the differential on-resistance was found to be 110mΩcm for a temperature of 25°C and 55mΩcm for a temperature of 175°C. In comparison to our former results, a reduction of the differential on-resistance of about 310mΩcm at room temperature is demonstrated.
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Germany (DE)How to cite
APA:
Hürner, A., Mitlehner, H., Erlbacher, T., Bauer, A., & Frey, L. (2016). Conduction loss reduction for bipolar injection field-effect-transistors (BIFET). Trans Tech Publications Ltd.
MLA:
Hürner, Andreas, et al. Conduction loss reduction for bipolar injection field-effect-transistors (BIFET). Trans Tech Publications Ltd, 2016.
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