Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices

Endruschat A, Heckel T, Gerstner H, Joffe C, Eckardt B, März M (2017)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2017

Event location: Albuquerque, NM US

DOI: 10.1109/WiPDA.2017.8170529

Abstract

This paper presents a procedure to acquire precise measurement data of the output characteristics with a custom-made setup. In comparison to datasheets and common curve tracer measurements, the measurement range is extended and the accuracy improved. After deriving the theoretical minimal switching energy for semiconductor switches in a half-bridge configuration, possible operating points of the latest semi­conductors are calculated with the measurement data. Based on these calculations, a comparison of different technologies and materials is made regarding their potential in currently available switches.

Authors with CRIS profile

Martin März Lehrstuhl für Leistungselektronik

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Endruschat, A., Heckel, T., Gerstner, H., Joffe, C., Eckardt, B., & März, M. (2017). Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices. In Proceedings of the 2017 IEEE WiPDA. Albuquerque, NM, US.

MLA:

Endruschat, Achim, et al. "Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices." Proceedings of the 2017 IEEE WiPDA, Albuquerque, NM 2017.

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