Pathfinding the perfect EUV mask (EUV)
Internally funded project
Acronym: EUV
Start date : 01.09.2021
Project details
Short description
Semiconductor industry is pushing for a smaller gate size on the chip. EUV is already used in high-volume manufacturing and delivers resolution of 13 nm lines and spaces with NA 0.33 system. The high-NA of 0.55 will be used in the high-volume manufacturing by 2023. The high-NA system has a resolution of 8 nm lines and spaces. High-NA system features an anamorphic demagnification of 4× in y-direction and 8× x-direction instead of 4× in both directions in NA of 0.33. The combination of smaller features to print and the anamorphic demagnification makes the system more sensitive to variations in the mask design and to optical constants. This work explores the effect of the optical constants’ variations in the mask absorber materials and different mask components’ effects.
This work aims to investigate the effect of the mask in high-NA EUVL (extreme-ultraviolet lithography) on the resulting image quality, which to be printed on the wafer for producing ICs (integrated circuits) and chips. The mask in EUVL contains two main parts; an absorber and a reflective multilayer that works as a Bragg mirror. The effect of both parts and the interaction between them are the core of this thesis.
Scientific Abstract
Abstract zu:
Simulation of high-NA EUV lithography
Involved:
Andreas Erdmann
Project Leader
Jörg Schulze
Project Leader
Hazem Mohamed Safwat Mesilhy
Project Member
