Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes (FR 713/14-1)

Third party funded individual grant


Acronym: FR 713/14-1

Start date : 02.10.2017

End date : 30.09.2019


Project details

Short description

To meet the contemporary developments in the information, communication, and data processing technologies, further improvements in the performance of highly integrated electron devices are indispensable. This can be achieved only by modifications of their architecture towards a three-dimensional structure together with a minimization of their dimensions on the nanometre scale. For their operation, electron devices require regions highly doped with dopant atoms (e.g. boron, phosphorus, or arsenic). In contemporary technologies, such regions are fabricated by ion implantation. In this doping process, the doping atoms are accelerated in an electric field and shot into the semiconductor. Besides the many advantages of the technique, ion implantation leads to a damage of the crystalline semiconductor materials which are in part hard to anneal for structures on the nanometre scale. In addition, it is increasingly difficult to dope three-dimensional structures. In consequence, as an alternative doping process, we will investigate in this project the diffusion of dopants from highly doped oxide layers. Such layers are deposited by atomic layer deposition with layer thicknesses in the nanometre range. The objective of the project is to develop and improve the respective deposition processes as well as to characterize and model the subsequent diffusion processes.

Scientific Abstract

Das wissenschaftliche Programm des Antrags beinhaltet die Zielsetzung, ergänzend zu Atomlagenabscheidungsprozessen für Boroxid und Antimonoxid, solche für phosphorhaltige Schichten zu entwickeln. Zudem sind für instabile dotierstoffhaltige Schichten geeignete Verfahren zur ihrer Stabilisierung zu finden und zu analysieren. Die abgeschiedenen Schichten sollen als Dotierstoffquelle für Silicium zur Erzeugung ultraflacher und homogen dotierter pn-übergänge, insbesondere bei dreidimensionalen Topographien, verwendet werden. über diese experimentellen Arbeiten hinaus sollen die abgeschiedenen Schichten charakterisiert und die Diffusionsprozesse im Silicium und in der Oxidphase untersucht und damit die Dotierprozesse modelliert werden.

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