Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration

Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H (2024)

Publication Type: Conference contribution, Abstract of a poster

Publication year: 2024

Event location: Verona IT

Authors with CRIS profile

Saskia Schimmel Lehrstuhl für Elektronische Bauelemente

Related research project(s)

Paving the way for validation of numerical simulations of ammonothermal crystal growth via in situ monitoring technology Aug. 1, 2021 - July 31, 2022 Ammonothermal growth of low dislocation density, high purity bulk GaN for power electronic devices May 31, 2019 - May 30, 2021

Involved external institutions

Nagoya University / 名古屋大学 JP Japan (JP) Tohoku University JP Japan (JP)

How to cite

APA:

Schimmel, S., Tomida, D., Ishiguro, T., Honda, Y., Chichibu, S.F., & Amano, H. (2024). Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration. Poster presentation at GaN Marathon, Verona, IT.

MLA:

Schimmel, Saskia, et al. "Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration." Presented at GaN Marathon, Verona 2024.

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