Tyulnev I, Jiménez-Galán Á, Poborska J, Vamos L, Russell PSJ, Tani F, Smirnova O, Ivanov M, Silva RE, Biegert J (2024)
Publication Type: Journal article
Publication year: 2024
Book Volume: 628
Pages Range: 746-751
Journal Issue: 8009
DOI: 10.1038/s41586-024-07156-y
The valley degree of freedom1–4 of electrons in materials promises routes towards energy-efficient information storage with enticing prospects for quantum information processing5–7. Current challenges in utilizing valley polarization are symmetry conditions that require monolayer structures8,9 or specific material engineering10–13, non-resonant optical control to avoid energy dissipation and the ability to switch valley polarization at optical speed. We demonstrate all-optical and non-resonant control over valley polarization using bulk MoS
APA:
Tyulnev, I., Jiménez-Galán, Á., Poborska, J., Vamos, L., Russell, P.S.J., Tani, F.,... Biegert, J. (2024). Valleytronics in bulk MoS2 with a topologic optical field. Nature, 628(8009), 746-751. https://doi.org/10.1038/s41586-024-07156-y
MLA:
Tyulnev, Igor, et al. "Valleytronics in bulk MoS2 with a topologic optical field." Nature 628.8009 (2024): 746-751.
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