Field effect studies on rubrene and impurities of rubrene

Zeis R, Besnard C, Siegrist T, Schlockermann C, Chi X, Kloc C (2006)

Publication Type: Journal article

Publication year: 2006

Journal

Chemistry of Materials American Chemical Society

Book Volume: 18

Pages Range: 244-248

Journal Issue: 2

DOI: 10.1021/cm0502626

Abstract

Rubrene single crystals have been grown by a vapor-phase process. Two additional compounds that contaminate rubrene have been identified and their structures determined. Single crystals of rubrene show excellent crystallinity and very small rocking curve width. Field effect transistors based on pure rubrene single crystals with colloidal graphite electrodes and Parylene as a dielectric demonstrate a maximal mobility of 13 cm 2/Vs with strong anisotropy. The mobility increases very slightly with cooling, but decreases significantly at low temperatures. © 2006 American Chemical Society.

Authors with CRIS profile

Roswitha Zeis

Involved external institutions

Lucent Technologies US United States (USA) (US) Lund University / Lunds universitet SE Sweden (SE)

How to cite

APA:

Zeis, R., Besnard, C., Siegrist, T., Schlockermann, C., Chi, X., & Kloc, C. (2006). Field effect studies on rubrene and impurities of rubrene. Chemistry of Materials, 18(2), 244-248. https://doi.org/10.1021/cm0502626

MLA:

Zeis, Roswitha, et al. "Field effect studies on rubrene and impurities of rubrene." Chemistry of Materials 18.2 (2006): 244-248.

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