Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
Kölle S, Römer F, Cardinali G, Schulz A, Susilo N, Hauer Vidal D, Wernicke T, Kneissl M, Witzigmann B (2024)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2024
Journal
Book Volume: 16
Pages Range: 1-5
Journal Issue: 2
DOI: 10.1109/JPHOT.2024.3379231
Abstract
Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experimental data obtained through optical pumping, and predict gain spectra for electrical pumping. Special consideration is given to the contribution of higher bands in wide quantum wells.
Authors with CRIS profile
Sebastian Kölle
Professur für Optoelektronik
Friedhard Römer
Professur für Optoelektronik
Bernd Witzigmann
Professur für Optoelektronik
Involved external institutions
Germany (DE)How to cite
APA:
Kölle, S., Römer, F., Cardinali, G., Schulz, A., Susilo, N., Hauer Vidal, D.,... Witzigmann, B. (2024). Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States. IEEE Photonics Journal, 16(2), 1-5. https://dx.doi.org/10.1109/JPHOT.2024.3379231
MLA:
Kölle, Sebastian, et al. "Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States." IEEE Photonics Journal 16.2 (2024): 1-5.
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