Comparative Experimental Evaluation of a Three-Phase ARCP Inverter With a Single Shared Inductor Using SiC MOSFETs and Si IGBTs

Lehmeier T, Amler A, Zhou Y, März M (2024)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2024

Publisher: IEEE

Pages Range: 547 - 554

Event location: Long Beach, California US

ISBN: 979-8-3503-1664-3

DOI: 10.1109/APEC48139.2024.10509084

Abstract

Using soft-switching, the efficiency and EMI performance of power inverters for drive and grid applications can be improved. An advantageous topology is the well-known auxiliary resonant commutated pole (ARCP) inverter. The novel single shared inductor S2I-ARCP is a modification of the conventional ARCP which saves two resonant inductors in the auxiliary circuit in case of a three-phase inverter application. This paper compares the use of SiC MOSFETs with Si IGBTs as main switches and the possible gain in efficiency compared to hard-switched implementation. The S 2 I-ARCP topology is implemented with a suitable control algorithm and tested at up to 15 kW with an 800 V dc-link. It is shown that at a switching frequency of 30 kHz, soft-switching can reduce losses by approximately 50% for configurations using either SiC MOSFETs or Si IGBTs as main switches. For both cases, the efficiency peaks at 99.65% and 98%, respectively.

Authors with CRIS profile

Thomas Lehmeier Lehrstuhl für Leistungselektronik Adrian Amler Lehrstuhl für Leistungselektronik Yan Zhou Lehrstuhl für Leistungselektronik Martin März Lehrstuhl für Leistungselektronik

How to cite

APA:

Lehmeier, T., Amler, A., Zhou, Y., & März, M. (2024). Comparative Experimental Evaluation of a Three-Phase ARCP Inverter With a Single Shared Inductor Using SiC MOSFETs and Si IGBTs. In Proceedings of the IEEE Applied Power Electronics Conference & Exposition (APEC 2024) (pp. 547 - 554). Long Beach, California, US: IEEE.

MLA:

Lehmeier, Thomas, et al. "Comparative Experimental Evaluation of a Three-Phase ARCP Inverter With a Single Shared Inductor Using SiC MOSFETs and Si IGBTs." Proceedings of the IEEE Applied Power Electronics Conference & Exposition (APEC 2024), Long Beach, California IEEE, 2024. 547 - 554.

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