Lehmeyer J, Fuchs A, Bornträger T, Popp MA, Weber HB, Krieger M (2023)
Publication Type: Journal article
Publication year: 2023
Book Volume: 426
Pages Range: 17-21
DOI: 10.4028/p-02xh85
We present a detailed study of the behavior of the photoluminescence (PL) of the TS color center in 4H-SiC under controlled mechanical strain. We have investigated the TS1 line under varying strain, including its reaction to compression and tension. We use emission polarization measurements to gain access to the orientation of the underlying defects. We put our results in context with previous findings and find good agreement, corroborating the proposed microscopic model.
APA:
Lehmeyer, J., Fuchs, A., Bornträger, T., Popp, M.A., Weber, H.B., & Krieger, M. (2023). Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC. Defect and Diffusion Forum, 426, 17-21. https://doi.org/10.4028/p-02xh85
MLA:
Lehmeyer, Johannes, et al. "Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC." Defect and Diffusion Forum 426 (2023): 17-21.
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