Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

Schreiber F, Baldrati L, Schmitt C, Ramos R, Saitoh E, Lebrun R, Klaeui M (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 117

Article Number: 082401

Journal Issue: 8

DOI: 10.1063/5.0011852

Abstract

We demonstrate stable and reversible current induced switching of large-area (>100 μm2) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains, enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Tohoku University JP Japan (JP)

How to cite

APA:

Schreiber, F., Baldrati, L., Schmitt, C., Ramos, R., Saitoh, E., Lebrun, R., & Klaeui, M. (2020). Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films. Applied Physics Letters, 117(8). https://doi.org/10.1063/5.0011852

MLA:

Schreiber, F., et al. "Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films." Applied Physics Letters 117.8 (2020).

BibTeX: Download