A large-energy-gap oxide topological insulator based on the superconductor BaBiO 3

Yan B, Jansen M, Felser C (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Nature Physics Nature Research

Book Volume: 9

Pages Range: 709-711

Journal Issue: 11

DOI: 10.1038/nphys2762

Abstract

Topological insulators are a new class of quantum materials that are characterized by robust topological surface states (TSSs) inside the bulk insulating gap, which hold great potential for applications in quantum information and spintronics as well as thermoelectrics. One major obstacle is the relatively small size of the bulk bandgap, which is typically around 0.3 eV for the known topological insulator materials (ref.and references therein). Here we demonstrate through ab initio calculations that a known superconductor BaBiO 3 (BBO) with a T c of nearly 30 K (refs,) emerges as a topological insulator in the electron-doped region. BBO exhibits a large topological energy gap of 0.7 eV, inside which a Dirac type of TSSs exists. As the first oxide topological insulator, BBO is naturally stable against surface oxidization and degradation, distinct from chalcogenide topological insulators. An extra advantage of BBO lies in its ability to serve as an interface between TSSs and superconductors to realize Majorana fermions for future applications in quantum computation. © 2013 Macmillan Publishers Limited.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE)

How to cite

APA:

Yan, B., Jansen, M., & Felser, C. (2013). A large-energy-gap oxide topological insulator based on the superconductor BaBiO 3. Nature Physics, 9(11), 709-711. https://doi.org/10.1038/nphys2762

MLA:

Yan, Binghai, Martin Jansen, and Claudia Felser. "A large-energy-gap oxide topological insulator based on the superconductor BaBiO 3." Nature Physics 9.11 (2013): 709-711.

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