Ouardi S, Fecher GH, Felser C, Kuebler J (2013)
Publication Type: Journal article
Publication year: 2013
Book Volume: 110
Article Number: 100401
Journal Issue: 10
DOI: 10.1103/PhysRevLett.110.100401
Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn
APA:
Ouardi, S., Fecher, G.H., Felser, C., & Kuebler, J. (2013). Realization of spin gapless semiconductors: The Heusler compound Mn 2CoAl. Physical Review Letters, 110(10). https://doi.org/10.1103/PhysRevLett.110.100401
MLA:
Ouardi, Siham, et al. "Realization of spin gapless semiconductors: The Heusler compound Mn 2CoAl." Physical Review Letters 110.10 (2013).
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