Spontaneous ripple formation in MoS2 monolayers: Electronic structure and transport effects

Miro P, Ghorbani-Asl M, Heine T (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Advanced Materials Wiley

Book Volume: 25

Pages Range: 5473-5475

Journal Issue: 38

DOI: 10.1002/adma.201301492

Abstract

The spontaneous formation of ripples in molybdenum disulfide (MoS 2) monolayers is investigated via density functional theory based tight-binding Born-Oppenheimer molecular dynamics. Monolayers with different lengths show spontaneous rippling during the simulations. The density of states reveals a decrease in the bandgap induced by the stretching of the MoS 2 units due to ripple formation. Significant quenching in electron conductance was also observed. The ripples in the MoS2 monolayers have an effect on the properties of the material and could impact its application in nanoelectronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Involved external institutions

Jacobs University Bremen gGmbH DE Germany (DE)

How to cite

APA:

Miro, P., Ghorbani-Asl, M., & Heine, T. (2013). Spontaneous ripple formation in MoS2 monolayers: Electronic structure and transport effects. Advanced Materials, 25(38), 5473-5475. https://doi.org/10.1002/adma.201301492

MLA:

Miro, Pere, Mahdi Ghorbani-Asl, and Thomas Heine. "Spontaneous ripple formation in MoS2 monolayers: Electronic structure and transport effects." Advanced Materials 25.38 (2013): 5473-5475.

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