Ultrafast Electrochemical Synthesis of Defect-Free In2Se3 Flakes for Large-Area Optoelectronics
Shi H, Li M, Shaygan Nia A, Wang M, Park S, Zhang Z, Lohe MR, Yang S, Feng X (2020)
Publication Type: Journal article
Publication year: 2020
Journal
Book Volume: 32
Article Number: 1907244
Journal Issue: 8
DOI: 10.1002/adma.201907244
Abstract
Because of its thickness-dependent direct bandgap and exceptional optoelectronic properties, indium(III) selenide (In2Se3) has emerged as an important semiconductor for electronics and optoelectronics. However, the scalable synthesis of defect-free In2Se3 flakes remains a significant barrier for its practical applications. Here, a facile electrochemical strategy is presented for the ultrafast delamination of bulk layered In2Se3 crystals in nonaqueous media, resulting in high-yield (83%) production of defect-free In2Se3 flakes with large lateral size (up to 26 µm). The intercalation of tetrahexylammonium (THA+) ions mainly creates stage-3 intercalated compounds in which every three layers of In2Se3 are occupied by one layer of THA molecules. The subsequent exfoliation leads to a majority of trilayer In2Se3 nanosheets. As a proof of concept, solution-processed, large-area (400 µm × 20 µm) thin-film photodetectors embedded with the exfoliated In2Se3 flakes reveal ultrafast response time with a rise and decay of 41 and 39 ms, respectively, and efficient responsivity (1 mA W−1). Such performance surpasses most of the state-of-the-art thin-film photodetectors based on transition metal dichalcogenides.
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How to cite
APA:
Shi, H., Li, M., Shaygan Nia, A., Wang, M., Park, S., Zhang, Z.,... Feng, X. (2020). Ultrafast Electrochemical Synthesis of Defect-Free In2Se3 Flakes for Large-Area Optoelectronics. Advanced Materials, 32(8). https://doi.org/10.1002/adma.201907244
MLA:
Shi, Huanhuan, et al. "Ultrafast Electrochemical Synthesis of Defect-Free In2Se3 Flakes for Large-Area Optoelectronics." Advanced Materials 32.8 (2020).
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