Characteristics of ALD-ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources

Yang J, Bahrami A, Ding X, Lehmann S, Kruse N, He S, Wang B, Hantusch M, Nielsch K (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Advanced Materials Interfaces WILEY-VCH Verlag GmbH & Co. KGaA

Book Volume: 9

Article Number: 2101953

Journal Issue: 15

DOI: 10.1002/admi.202101953

Abstract

ZnO thin films are deposited by atomic layer deposition (ALD) using diethylzinc as the Zn source and H2O and H2O2 as oxygen sources. The oxidant- and temperature-dependent electrical properties and growth characteristics are systematically investigated. Materials analysis results suggest that H2O2 provides an oxygen-rich environment so that the oxygen vacancies (VO) is suppressed, implying a lower carrier concentration and a higher resistivity. The lower growth rate makes it possible for the ZnO thin films to grow along the lower surface energy direction of <002>, leading to a lower Hall mobility. Furthermore, the ZnO semiconductor is integrated into thin film transistor (TFT) devices and the electrical properties are analyzed. The TFT with H2O2-ZnO grown at 150 °C shows good electrical properties, such as a high field-effect mobility of 10.7 cm2 V–1 s–1, a high ratio Ion/Ioff of 2 × 107, a sharp subthreshold swing of 0.25 V dec–1, and a low trapping state (Ntrap) of 2.77 × 1012 eV–1 cm–2, which provides a new pathway to optimize the performance of metal-oxide electronics.

Involved external institutions

Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW) / Leibniz Institute for Solid State and Materials Research Dresden DE Germany (DE) Seoul National University (SNU) / 서울대학교 KR Korea, Republic of (KR) Shanghai University / 上海大学 (SHU) CN China (CN)

How to cite

APA:

Yang, J., Bahrami, A., Ding, X., Lehmann, S., Kruse, N., He, S.,... Nielsch, K. (2022). Characteristics of ALD-ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources. Advanced Materials Interfaces, 9(15). https://doi.org/10.1002/admi.202101953

MLA:

Yang, Jun, et al. "Characteristics of ALD-ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources." Advanced Materials Interfaces 9.15 (2022).

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