Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells

Li M, Ma FJ, Peters IM, Shetty KD, Aberle AG, Hoex B, Samudra GS (2017)

Publication Type: Journal article

Publication year: 2017

Journal

IEEE Journal of Photovoltaics Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 7

Pages Range: 755-762

Article Number: 7890485

Journal Issue: 3

DOI: 10.1109/JPHOTOV.2017.2679342

Abstract

Efficient optimization of the boron-doped region of silicon solar cells requires reliable process simulation of boron tube diffusion. Established simulation models and parameters are mostly calibrated for complementary metal oxide semiconductor device fabrication, where the doping processes are significantly different from those used in solar cell fabrication. In this paper, we present models and a set of corresponding parameters that are suitable for process simulation of BBr3 tube diffusion for solar cell applications with Sentaurus TCAD. Experimental doping profiles obtained with a wide range of diffusion recipes are compared with simulation results. Additionally, with the process parameter sensitivity analysis, we demonstrate the dominant process parameters that alter the boron distribution profile and its effect on the electrical performance.

Involved external institutions

National University of Singapore (NUS) SG Singapore (SG) University of New South Wales (UNSW) AU Australia (AU) Massachusetts Institute of Technology (MIT) US United States (USA) (US) Tata Power Solar IN India (IN)

How to cite

APA:

Li, M., Ma, F.-J., Peters, I.M., Shetty, K.D., Aberle, A.G., Hoex, B., & Samudra, G.S. (2017). Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells. IEEE Journal of Photovoltaics, 7(3), 755-762. https://doi.org/10.1109/JPHOTOV.2017.2679342

MLA:

Li, Mengjie, et al. "Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells." IEEE Journal of Photovoltaics 7.3 (2017): 755-762.

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