A modeling framework for optimizing current density in four-terminal tandem solar cells: A case study on GaAs/Si tandem

Liu Z, Ren Z, Liu H, Sahraei N, Lin F, Stangl R, Aberle AG, Buonassisi T, Peters IM (2017)


Publication Type: Journal article

Publication year: 2017

Journal

Book Volume: 170

Pages Range: 167-177

DOI: 10.1016/j.solmat.2017.05.048

Abstract

We present a modeling framework to quantify current density losses and determine optimization steps for four-terminal tandem solar cells, which consist of a high-bandgap thin-film top cell and an industrial-type Si wafer bottom cell. We demonstrate the framework on the example of a 21.3% efficient stacked four-terminal GaAs/Si tandem solar cell. In a first step, we develop an optical model for stacked tandem configuration and carry out the current loss analysis for this tandem device. Photon absorption in the tandem is broken down into different channels. All parasitic absorptions that do not contribute to current generation are considered part of a loss channel. In a second step, we quantify the potential current gains from single-parameter optimizations, the redistribution of photon losses into other channels, and the synergistic gains that can be achieved by co-optimization. Finally, using the simulation model, we are able to determine the best sequence of optimizing the short-circuit current density in the GaAs/Si tandem solar cell to possibly achieve 37.8 mA/cm2 with experimentally feasible parameters.

Involved external institutions

How to cite

APA:

Liu, Z., Ren, Z., Liu, H., Sahraei, N., Lin, F., Stangl, R.,... Peters, I.M. (2017). A modeling framework for optimizing current density in four-terminal tandem solar cells: A case study on GaAs/Si tandem. Solar Energy Materials and Solar Cells, 170, 167-177. https://doi.org/10.1016/j.solmat.2017.05.048

MLA:

Liu, Zhe, et al. "A modeling framework for optimizing current density in four-terminal tandem solar cells: A case study on GaAs/Si tandem." Solar Energy Materials and Solar Cells 170 (2017): 167-177.

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