Swekis P, Markou A, Kriegner D, Gayles J, Schlitz R, Schnelle W, Goennenwein STB, Felser C (2019)
Publication Type: Journal article
Publication year: 2019
Book Volume: 3
Article Number: 013001
Journal Issue: 1
DOI: 10.1103/PhysRevMaterials.3.013001
Spin chirality in metallic materials with noncoplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn1.5PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ0H≈4T below the spin reorientation transition temperature, Ts=185 K. We find that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn2-xPtSn by extracting the effect for multiple stoichiometries (x=0.5,0.25,0.1) and film thicknesses (t=104,52,35 nm) with maximum topological Hall resistivities between 0.76 and 1.55μΩcm at 150 K.
APA:
Swekis, P., Markou, A., Kriegner, D., Gayles, J., Schlitz, R., Schnelle, W.,... Felser, C. (2019). Topological Hall effect in thin films of Mn1.5PtSn. Physical Review Materials, 3(1). https://doi.org/10.1103/PhysRevMaterials.3.013001
MLA:
Swekis, Peter, et al. "Topological Hall effect in thin films of Mn1.5PtSn." Physical Review Materials 3.1 (2019).
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