Topological Hall effect in thin films of Mn1.5PtSn

Swekis P, Markou A, Kriegner D, Gayles J, Schlitz R, Schnelle W, Goennenwein STB, Felser C (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Physical Review Materials American Physical Society

Book Volume: 3

Article Number: 013001

Journal Issue: 1

DOI: 10.1103/PhysRevMaterials.3.013001

Abstract

Spin chirality in metallic materials with noncoplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn1.5PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ0H≈4T below the spin reorientation transition temperature, Ts=185 K. We find that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn2-xPtSn by extracting the effect for multiple stoichiometries (x=0.5,0.25,0.1) and film thicknesses (t=104,52,35 nm) with maximum topological Hall resistivities between 0.76 and 1.55μΩcm at 150 K.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) Technische Universität Dresden DE Germany (DE)

How to cite

APA:

Swekis, P., Markou, A., Kriegner, D., Gayles, J., Schlitz, R., Schnelle, W.,... Felser, C. (2019). Topological Hall effect in thin films of Mn1.5PtSn. Physical Review Materials, 3(1). https://doi.org/10.1103/PhysRevMaterials.3.013001

MLA:

Swekis, Peter, et al. "Topological Hall effect in thin films of Mn1.5PtSn." Physical Review Materials 3.1 (2019).

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