Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements

Susilo N, Schilling M, Narodovitch M, Yao HH, Li X, Witzigmann B, Enslin J, Guttmann M, Roumeliotis GG, Rychetsky M, Koslow I, Wernicke T, Niermann T, Lehmann M, Kneissl M (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Japanese Journal of Applied Physics Japan Society of Applied Physics

Book Volume: 58

Article Number: SCCB08

Journal Issue: SC

DOI: 10.7567/1347-4065/ab09dd

Abstract

Due to changes in the spontaneous and piezoelectric polarization, AlGaN/GaN heterostructures exhibit strong polarization fields at heterointerfaces. For quantum wells, the polarization fields lead to a strong band bending and a redshift of the emission wavelength, known as quantum-confined Stark effect. In this paper the polarization fields of thin AlGaN layers in a GaN matrix were determined by evaluating the changes in the depletion region width in comparison to a reference sample without heterostructure using capacitance-voltage-measurements. The polarization fields for Al0.09Ga0.91N (0.6 ±0.7 MV cm-1), Al0.26Ga0.74N (2.3 ±0.6 MV cm-1), Al0.34Ga0.66N (3.1 ±0.6 MV cm-1), Al0.41Ga0.59N (4.0 ±0.7 MV cm-1) and Al0.47Ga0.53N (5.0 ±0.8 MV cm-1) heterostructures were determined. The results of the field strength and field direction of all samples are in excellent agreement with values predicted by theory and a capacitance-voltage based Poisson-carrier transport simulation approach giving experimental evidence for a nonlinear increasing polarization field with Al-concentration.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Technische Universität Berlin DE Germany (DE) King Abdullah University of Science and Technology (KAUST) / جامعة الملك عبد الله للعلوم و التقنية SA Saudi Arabia (SA) Universität Kassel DE Germany (DE)

How to cite

APA:

Susilo, N., Schilling, M., Narodovitch, M., Yao, H.-H., Li, X., Witzigmann, B.,... Kneissl, M. (2019). Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements. Japanese Journal of Applied Physics, 58(SC). https://doi.org/10.7567/1347-4065/ab09dd

MLA:

Susilo, Norman, et al. "Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements." Japanese Journal of Applied Physics 58.SC (2019).

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