Film Thickness of Pb Islands on the Si(111) Surface

Spaeth T, Popp MA, Hoffmann-Vogel R (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Physical Review Letters American Physical Society

Book Volume: 124

Journal Issue: 1

DOI: 10.1103/PhysRevLett.124.016101

Abstract

We analyze topographic scanning force microscopy images together with Kelvin probe images obtained on Pb islands and on the wetting layer on Si(111) for variable annealing times. Within the wetting layer we observe negatively charged Si-rich areas. We show evidence that these Si-rich areas result from islands that have disappeared by coarsening. We argue that the islands are located on Si-rich areas inside the wetting layer such that the Pb/Si interface of the islands is in line with the top of the wetting layer rather than with its interface to the substrate. We propose that the Pb island heights are one atomic layer smaller than previously believed. For the quantum size effect bilayer oscillations of the work function observed in this system, we conclude that for film thicknesses below 9 atomic layers large values of the work function correspond to even numbers of monolayers instead of odd ones. The atomically precise island height is important to understand ultrafast "explosive" island growth in this system.

Authors with CRIS profile

Matthias Albert Popp Chair of Applied Physics

Involved external institutions

Universität Konstanz DE Germany (DE) Karlsruhe Institute of Technology (KIT) DE Germany (DE)

How to cite

APA:

Spaeth, T., Popp, M.A., & Hoffmann-Vogel, R. (2020). Film Thickness of Pb Islands on the Si(111) Surface. Physical Review Letters, 124(1). https://doi.org/10.1103/PhysRevLett.124.016101

MLA:

Spaeth, Th., Matthias Albert Popp, and R. Hoffmann-Vogel. "Film Thickness of Pb Islands on the Si(111) Surface." Physical Review Letters 124.1 (2020).

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