Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements

Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A (2019)

Publication Type: Conference contribution

Publication year: 2019

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 963 MSF

Pages Range: 445-448

Conference Proceedings Title: Materials Science Forum

Event location: Birmingham GB

ISBN: 9783035713329

DOI: 10.4028/www.scientific.net/MSF.963.445

Abstract

�The prediction of the compensation induced hole concentration reduction in implanted Al regions is a key parameter in developing high power SiC devices. Hall effect measurements are commonly used to determine the compensation ratio of Al implanted regions. Due to the fact that this measurement method is rather complex, an approximate method was developed by using transfer length method structure measurements in combination with a TCAD simulation model. The determined compensation ratios from this work’s simulation and from Hall effect measurements from literature show consistent compensation ratios. Based on this data a fit function was derived which allows for estimating the compensation ratio for a wide Al concentration range.

Authors with CRIS profile

Matthias Kocher Lehrstuhl für Elektronische Bauelemente Julietta Förthner Lehrstuhl für Elektronische Bauelemente Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Tianjin University (TJU) / 天津大学 CN China (CN)

How to cite

APA:

Kocher, M., Yao, B., Weiße, J., Rommel, M., Xu, Z.W., Erlbacher, T., & Bauer, A. (2019). Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 445-448). Birmingham, GB: Trans Tech Publications Ltd.

MLA:

Kocher, Matthias, et al. "Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 445-448.

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