Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer

Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R (2019)

Publication Type: Conference contribution

Publication year: 2019

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 963 MSF

Pages Range: 114-118

Conference Proceedings Title: Materials Science Forum

Event location: Birmingham GB

ISBN: 9783035713329

DOI: 10.4028/www.scientific.net/MSF.963.114

Abstract

We studied the impact of ion implantation into the wafer substrate prior to the epitaxy process on the basal plane dislocation conversion behavior during epitaxial layer growth. Defect density measurements show an enhancing effect of the ion implantation on the basal plane dislocation to threading edge dislocation conversion. Analysis of the lateral conversion distribution, the stress field in the material as well as the wafer topography at the onset of epitaxial growth lead us to believe that stresses in the epitaxy layer cause the enhanced basal plane dislocation conversion.

Authors with CRIS profile

Christian Heidorn Chair of Applied Physics Michael Krieger Chair of Applied Physics Heiko Weber Chair of Applied Physics

Involved external institutions

Infineon Technologies AG DE Germany (DE) Infineon Technologies Austria AG AT Austria (AT)

How to cite

APA:

Heidorn, C., Esteve, R., Höchbauer, T., Krieger, M., Weber, H.B., & Rupp, R. (2019). Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 114-118). Birmingham, GB: Trans Tech Publications Ltd.

MLA:

Heidorn, Christian, et al. "Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 114-118.

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