Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET
Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 963 MSF
Pages Range: 490-493
Conference Proceedings Title: Materials Science Forum
Event location: Birmingham
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.490
Abstract
A comparison between self-aligned process (using lift-off) and Ni-SALICIDE (nickel self-aligned silicide) used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is shown that the Ni-SALICIDE process with first silicidation at 500°C does not degrade the electrical properties of silicon dioxide; particularly, a degradation of the interlayer dielectric between source and gate is not evident. Additionally, this first silicidation is found to have a positive impact on the specific resistance of contacts formed on p-type SiC using NiAl2.6% as an ohmic metal (ρc ≈ 400 µΩcm2).
Authors with CRIS profile
Tobias Erlbacher
Lehrstuhl für Elektronische Bauelemente
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
CRRC Corporation Limited / 中国中车股份有限公司
China (CN)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
China (CN)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
How to cite
APA:
Śledziewski, T., Erlbacher, T., Bauer, A., Frey, L., Chen, X., Zhao, Y.,... Dai, X. (2019). Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 490-493). Birmingham, GB: Trans Tech Publications Ltd.
MLA:
Śledziewski, Tomasz, et al. "Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 490-493.
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