New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor
Höchbauer T, Heidorn C, Tsavdaris N (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 963 MSF
Pages Range: 123-126
Conference Proceedings Title: Materials Science Forum
Event location: Birmingham
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.123
Abstract
The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.
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Austria (AT)How to cite
APA:
Höchbauer, T., Heidorn, C., & Tsavdaris, N. (2019). New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 123-126). Birmingham, GB: Trans Tech Publications Ltd.
MLA:
Höchbauer, Tobias, Christian Heidorn, and Nikolaos Tsavdaris. "New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 123-126.
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