On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements
Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 963 MSF
Pages Range: 433-436
Conference Proceedings Title: Materials Science Forum
Event location: Birmingham
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.433
Abstract
Aluminum implanted 4H-SiC often shows an unexpected increase of the free hole density at elevated temperatures in Hall Effect measurements. Here, we exhibit that this phenomenon cannot solely be traced down to the Hall scattering factor and the presence of excited acceptor states. It is necessary to assume an additional defect center in the lower half of the band gap with ionization energies higher than that of aluminum to explain this behavior. Therefore, we investigated ionimplanted square van-der-Pauw samples with Hall Effect and complementary SIMS measurements. An analysis of the data using the neutrality equation reveals compensation ratios of 20 % to 90 %, depending on the aluminum concentration and the concentration of the deep defect center of up to 50 % of the doping.
Authors with CRIS profile
Julietta Förthner
Lehrstuhl für Elektronische Bauelemente
Martin Hauck
Chair of Applied Physics
Michael Krieger
Chair of Applied Physics
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Tobias Erlbacher
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Weiße, J., Hauck, M., Sledziewski, T., Krieger, M., Bauer, A., Mitlehner, H.,... Erlbacher, T. (2019). On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 433-436). Birmingham, GB: Trans Tech Publications Ltd.
MLA:
Weiße, Julietta, et al. "On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 433-436.
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