Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits

Weiße J, Mitlehner H, Frey L, Erlbacher T (2019)

Publication Type: Conference contribution

Publication year: 2019

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 963 MSF

Pages Range: 629-632

Conference Proceedings Title: Materials Science Forum

Event location: Birmingham GB

ISBN: 9783035713329

DOI: 10.4028/www.scientific.net/MSF.963.629

Abstract

In this work, a lateral 4H-SiC n-LDMOS transistor, based on the principle of a reduced surface field due to charge compensation, is investigated by numerical simulations, in order to find adequate fabrication parameters for a lightly doped p-type epitaxial layer in combination with a higher doped channel region. The purpose of this work is the integration into an existing technology for a 10 V 4H-SiC-CMOS process. The simulations predict in a blocking voltage of 1.3 kV in combination with an On-resistance of 17 mΩcm2 for a device with a RESURF structure (REduced SURface Field) with a total implanted Al concentration of 6∙1016 cm-3 and a depth of 1 µm, a field plate of 5 µm and a drift region of 20 µm. The threshold voltage varies from 5 V to 10 V, depending on the thickness of the gate oxide (50 nm to 100 nm).

Authors with CRIS profile

Julietta Förthner Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Weiße, J., Mitlehner, H., Frey, L., & Erlbacher, T. (2019). Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 629-632). Birmingham, GB: Trans Tech Publications Ltd.

MLA:

Weiße, Julietta, et al. "Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 629-632.

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