Özkan S, Ghanem H, Mohajernia S, Hejazi S, Fromm T, Borchardt R, Rosiwal S, Schmuki P (2019)
Publication Language: English
Publication Type: Journal article
Publication year: 2019
In the present work, we investigate the efficiency of TiO2 photoelectrode layers on boron-doped diamond foil (BDDF) in
comparison with a classic conducting glass (fluorine-doped tin oxide, FTO) back contact. Crystalline thin TiO2 layers were prepared on the substrates by two different methods: (i) deposition of metallic Ti thin films followed by thermal oxidation to form TiO2 (TO-TiO2), (ii) reactive sputter deposition of TiO2 thin films and crystallization of these layers (SP-TiO2). Optimized layers show that TO-TiO2 films on BDDF deliver a significantly higher incident photon to current ifficiency (IPCE) compared to directly sputtered SP-TiO2 layers and these layers on BDDF also outperform FTO as a back contact. We ascribe this beneficial effect of the BDDF back contact to the formation of an intermediate conductive phase of Ti-carbides at the TO-TiO2/BDDF interface.
APA:
Özkan, S., Ghanem, H., Mohajernia, S., Hejazi, S., Fromm, T., Borchardt, R.,... Schmuki, P. (2019). Boron-doped diamond (BDD) as an efficient back contact to thermally grown TiO2 photoelectrodes. ChemElectroChem. https://dx.doi.org/10.1002/celc.201901073
MLA:
Özkan, Selda, et al. "Boron-doped diamond (BDD) as an efficient back contact to thermally grown TiO2 photoelectrodes." ChemElectroChem (2019).
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