Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Luna E, Wu M, Aoki T, McCartney MR, Puustinen J, Hilska J, Guina M, Smith DJ, Trampert A (2019)

Publication Type: Journal article, Original article

Publication year: 2019

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 126

Article Number: 085305

Journal Issue: 08

DOI: 10.1063/1.5111532

Authors with CRIS profile

Mingjian Wu Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)

Involved external institutions

Arizona State University (ASU) US United States (USA) (US) Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V. DE Germany (DE) Tampere University of Technology FI Finland (FI)

How to cite

APA:

Luna, E., Wu, M., Aoki, T., McCartney, M.R., Puustinen, J., Hilska, J.,... Trampert, A. (2019). Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers. Journal of Applied Physics, 126(08). https://dx.doi.org/10.1063/1.5111532

MLA:

Luna, Esperanza, et al. "Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers." Journal of Applied Physics 126.08 (2019).

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