Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P (2019)

Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2019

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 963

Pages Range: 149-152

DOI: 10.4028/www.scientific.net/MSF.963.149

Abstract

We present three different ways of transferring 3C-SiC layers grown on silicon on top of a SiC carrier using a carbon glue layer. Our main focus was upon the growth on the transition layer, as 3C-SiC does not feature any polarities in the <100> or <-100> direction. We realized a stable and reproducible process by following a wet chemical approach, dealing with the difficulties of handling thin but freestanding 3C-SiC layers. By using this way, we transferred approximately 130 μm thick pieces using their horizontal hot-wall reactor (M10), which were chemo mechanically polished and afterwards fixed on our SiC carriers. Implementing such a seeding stack into our growth setup, we managed to grow between 20 μm and 130 μm thick layers on top. We have proven the possibility to grow on the transition layer. Furthermore, we observed a slight reduction in protrusion density, which is currently one of the main defects in such layers.

Authors with CRIS profile

Philipp Schuh Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Ulrike Künecke Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

CNR Institute for Microelectronics and Microsystems (CNR-IMM) IT Italy (IT) NOVASiC FR France (FR) E.T.C. (LPE Spa - Epitaxial Technology Center) IT Italy (IT)

How to cite

APA:

Schuh, P., Künecke, U., Litrico, G., Mauceri, M., La Via, F., Monnoye, S.,... Wellmann, P. (2019). Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates. Materials Science Forum, 963, 149-152. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.149

MLA:

Schuh, Philipp, et al. "Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates." Materials Science Forum 963 (2019): 149-152.

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