Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

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Details zur Publikation

Autorinnen und Autoren: Schuster M, Stapf D, Osterrieder T, Barthel V, Wellmann P
Zeitschrift: Coatings
Jahr der Veröffentlichung: 2019
Band: 9
Seitenbereich: 1-16
ISSN: 2079-6412
Sprache: Englisch


Abstract

Copper indium gallium sulfo-selenide (CIGS) based solar cells show the highest conversion eciencies among all thin-film photovoltaic competition. However, the absorber material manufacturing is in most cases dependent on vacuum-technology like sputtering and evaporation, and the use of toxic and environmentally harmful substances like H2Se. In this work, the goal to fabricate dense, coarse grained CuInSe2 (CISe) thin-films with vacuum-free processing based on nanoparticle (NP) precursors was achieved. Bimetallic copper-indium, elemental selenium and binary selenide (Cu2-xSe and In2Se3) NPs were synthesized by wet-chemical methods and dispersed in nontoxic solvents. Layer-stacks from these inks were printed on molybdenum coated float-glass-substrates via doctor-blading. During the temperature treatment, a face-to-face technique and mechanically applied pressure were used to transform the precursor-stacks into dense CuInSe2 films. By combining liquid phase sintering and pressure sintering, and using a seeding layer later on, issues like high porosity, oxidation, or selenium- and indium-depletion were overcome. There was
no need for external Se atmosphere or H2Se gas, as all of the Se was directly in the precursor and could not leave the face-to-face sandwich. All thin-films were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diraction (XRD), and UV/vis spectroscopy. Dense CISe layers with a thickness of about 2–3 m and low band gap energies of 0.93–0.97 eV were formed in this work, which show potential to be used as a solar cell absorber.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Schuster, Matthias
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Zitierweisen

APA:
Schuster, M., Stapf, D., Osterrieder, T., Barthel, V., & Wellmann, P. (2019). Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure. Coatings, 9, 1-16. https://dx.doi.org/10.3390/coatings9080484

MLA:
Schuster, Matthias, et al. "Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure." Coatings 9 (2019): 1-16.

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Zuletzt aktualisiert 2019-14-08 um 09:38