Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Liao X, Jeong AR, Wilks RG, Wiesner S, Rusu M, Félix R, Xiao T, Hartmann C, Bär M (2019)

Publication Type: Journal article

Publication year: 2019

Journal

ACS Omega American Chemical Society: Open Access Titles / American Chemical Society

Book Volume: 4

Pages Range: 10985-10990

Journal Issue: 6

DOI: 10.1021/acsomega.9b01027

Abstract

The chemical and electronic structure of MoO3 thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO3. At moderate temperatures (120-200 °C), we find spectral evidence for the formation of Mo5+ and at higher temperatures (>165 °C) also of Mo4+ states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states. A clear relation between annealing temperature and the induced changes in the chemical and electronic structure suggests this approach as a route for deliberate tuning of MoO3 thin-film properties.

Authors with CRIS profile

Marcus Bär Professur für Röntgenspektroskopie (HIERN)

Involved external institutions

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE)

How to cite

APA:

Liao, X., Jeong, A.R., Wilks, R.G., Wiesner, S., Rusu, M., Félix, R.,... Bär, M. (2019). Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission. ACS Omega, 4(6), 10985-10990. https://doi.org/10.1021/acsomega.9b01027

MLA:

Liao, Xiaxia, et al. "Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission." ACS Omega 4.6 (2019): 10985-10990.

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